X2-Class HiPerFETTM
Power MOSFET
IXFH46N65X2 VDSS = 650V
I
D25 = 46A
RDS(on) 69m
Symbol Test Conditions Characteristic Values
(TJ
= 25C, Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 1mA 650 V
VGS(th) VDS = VGS, ID = 4mA 3.5 5.5 V
I
GSS VGS = 30V, VDS = 0V 100 nA
I
DSS VDS = VDSS, VGS = 0V 25 A
TJ
= 125C 2 mA
RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 69 m
Symbol Test Conditions Maximum Ratings
VDSS TJ = 25C to 150C 650 V
VDGR TJ = 25C to 150C, RGS = 1M 650 V
VGSS Continuous 30 V
VGSM Transient 40 V
I
D25 TC = 25C 46 A
I
DM TC = 25C, Pulse Width Limited by TJM 100 A
I
A TC = 25C 10 A
EAS TC = 25C 2J
dv/dt IS IDM, VDD VDSS, TJ 150°C 50 V/ns
PD TC = 25C 660 W
TJ -55 ... +150 C
TJM 150 C
Tstg -55 ... +150 C
TL Maximum Lead Temperature for Soldering 300 °C
TSOLD 1.6 mm (0.062in.) from Case for 10s 260 °C
Md Mounting Torque 1.13 / 10 Nm/lb.in
Weight 6 g
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Features
International Standard Package
Low RDS(ON) and_QG Avalanche Rated
Low Package Inductance
Advantages
High Power Density
Easy to Mount
Space Savings
Applications
Switch-Mode and_Resonant-Mode
Power Supplies
DC-DC Converters
PFC Circuits
AC and_DC Motor Drives
Robotics and_Servo Controls
G = Gate D = Drain
S = Source Tab = Drain
TO-247
G
S D
D (Tab)
IXYS Reserves the Right to Change Limits, Test Conditions, and_Dimensions.
IXFH46N65X2
Note 1. Pulse test, t 300s, duty cycle, d 2%